Patent · US Active

Bulk acoustic wave resonator device and method of manufacturing thereof

US11942915B2 · kind B2 · utility

0Cited by

0References

7Claims

0Family size

Assignee

RF360 Singapore Pte. Ltd. · SG

Inventors

Ulrike Roesler · Hebertshausen, DE
Willi AIGNER · Moosinning, DE
Maximilian SCHIEK · Puchheim, DE
Giuseppe TOSCANO · Munich, DE

Key dates

Filing date	Mar 7, 2019
Grant date	Mar 26, 2024
Priority date	—
Expiry date	Sep 12, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH03H2003/025
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A bulk acoustic wave resonator device comprises bottom and top electrodes (120, 360). A piezoelectric layer (355) sandwiched therebetween has a thickness in the active resonator area different from the thickness in the surrounding area. A method of manufacturing the device comprises a bonding of a piezoelectric wafer to a carrier wafer and splitting a portion of the piezoelectric wafer by an ion-cut technique. Different thicknesses of the piezoelectric layer in the active area and the surrounding area are achieved by implanting ions at different depths.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.