Acoustic wave device
US11942921B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2021 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Sep 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/25
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In an acoustic wave device, an IDT electrode is located on a piezoelectric layer. A high-acoustic-velocity member is positioned on an opposite side of the piezoelectric layer from the IDT electrode. An acoustic velocity of a bulk wave propagating through the high-acoustic-velocity member is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric layer. A low-acoustic-velocity film is provided between the high-acoustic-velocity member and the piezoelectric layer. An acoustic velocity of a bulk wave propagating through the low-acoustic-velocity film is lower than the acoustic velocity of the bulk wave propagating through the piezoelectric layer. A dielectric film is located on the piezoelectric layer so as to cover the IDT electrode. In the acoustic wave device, a Young's modulus of the dielectric film is larger than a Young's modulus of the low-acoustic-velocity film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.