Semiconductor device and method of manufacturing the same
US11943936B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 12, 2021 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Apr 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first transistor, a first resistive random access memory (RRAM) resistor, and a second RRAM resistor. The first resistor includes a first resistive material layer, a first electrode shared by the second resistor, and a second electrode. The second resistor includes the first electrode, a second resistive material layer, and a third electrode. The first electrode is electrically coupled to the first transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.