Dielectric material, device comprising dielectric material, and method of preparing dielectric material
US11946154B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2020 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | May 5, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/81
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. may be in a range of about −15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.