Hydrogen sensor having vertical nanogap structure and method for manufacturing the same
US11946920B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | Jan 13, 2021 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | Mar 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02107
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure relates to a hydrogen sensor and a method for manufacturing the same, and more particularly, to a hydrogen sensor having a vertical nanogap structure, in which a nanogap is formed below a sensor portion to bring the sensor portion and an electrode into contact with each other when the sensor portion reacts with hydrogen, so as to allow the sensor portion to expand and contract freely without resistance on a substrate, thereby improving hydrogen sensing accuracy, and it is possible to form a precise nanogap with uniformity and reproducibility at a low cost and a method for manufacturing the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.