Process environment for inorganic resist patterning
US11947262B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2021 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | Jun 7, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/168
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The processing of radiation patternable organometallic coatings is shown to be improved through the appropriate selection of post processing conditions between coating and development of the pattern. In particular, a coated wafer can be subjected to process delays to allow aging of the coating at various process points, in particular following irradiation. Process delays can be combined and interspersed with heating steps. The atmosphere above the coated wafer at various process steps can be adjusted to obtain desired improvements in the development of the pattern. Reactive gases can be beneficial with respect to improvement of coating properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.