Method for manufacturing single-crystal semiconductor layer, structure comprising single-crystal semiconductor layer, and semiconductor device comprising structure
US11948795B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2019 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | Dec 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a method for manufacturing a single-crystal semiconductor layer. The method of manufacturing the single crystalline semiconductor layer includes performing a unit cycle multiple times, wherein the unit cycle includes a metal precursor pressurized dosing operation in which a metal precursor is adsorbed on a surface of a single crystalline substrate by supplying the metal precursor onto the single crystalline substrate while an outlet of a chamber in which the single crystalline substrate is loaded is closed such that a reaction pressure in the chamber is increased; a metal precursor purge operation; a reactive gas supplying operation in which a reactive gas is supplied into the chamber to cause a reaction of the reactive gas with the metal precursor adsorbed on the single crystalline substrate after the metal precursor purge operation; and a reactive gas purge operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.