Semiconductor device
US11948883B2 · kind B2 · utility
0Cited by
5References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 2, 2021 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | Jul 31, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a transistor on a substrate; an interlayer insulating layer on the transistor; a first metal-containing layer on the interlayer insulating layer; and a second metal-containing layer on the first metal-containing layer, wherein the second metal-containing layer includes a resistor, the resistor includes a first insulating layer on the first metal-containing layer; a resistor metal layer on the first insulating layer; and a second insulating layer on the resistor metal layer, and the resistor metal layer includes a recessed side surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.