Capacitor and method for producing same
US11948995B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2021 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | Jan 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A capacitor includes a silicon substrate, a conductor layer, and a dielectric layer. The silicon substrate has a principal surface including a capacitance generation region and a non-capacitance generation region. The silicon substrate includes a porous part provided in a thickness direction in the capacitance generation region. The conductor layer includes a surface layer part at least covering part of a surface of the capacitance generation region and a filling part filled in at least part of the porous part. The dielectric layer is provided between an inner surface of the porous part and the filling part. The porous part includes a macroporous part having macro pores and a nanoporous part formed in at least part of inner surfaces of the macro pores and having nano pores smaller than the macro pores.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.