Power semiconductor device with p-contact and doped insulation blocks defining contact holes

US11949006B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Markus Beninger-Bina · Großhelfendorf, DE
• Matteo Dainese · Munich, DE
• Ingo Dirnstorfer · Eindhoven, NL
• Erich Griebl · Dorfen, DE
• Johannes Georg Laven · Taufkirchen, DE
• Anton Mauder · Kolbermoor, DE
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: May 20, 2021
• Grant date: Apr 2, 2024
• Expiry date: Jun 29, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/117
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor device includes: first and second trenches extending from a surface of a semiconductor body along a vertical direction and laterally confining a mesa region along a first lateral direction; source and body regions in the mesa region electrically connected to a first load terminal; and a first insulation layer having a plurality of insulation blocks, two of which laterally confine a contact hole. The first load terminal extends into the contact hole to contact the source and body regions at the mesa region surface. A first insulation block laterally overlaps with the first trench. A second insulation block laterally overlaps with the second trench. The first insulation block has a first lateral concentration profile of a first implantation material of the source region along the first lateral direction that is different from a corresponding second lateral concentration profile for the second insulation block.