Semiconductor structure and method for forming the same
US11949008B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2020 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | Sep 20, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/471
Abstract
A semiconductor structure is provided. The semiconductor structure includes a substrate having a front side and a back side opposite the front side. The semiconductor structure also includes a first contact metal layer disposed on the front side of the substrate. The semiconductor structure further includes a III-V compound semiconductor layer disposed between the substrate and the first contact metal layer. Moreover, the semiconductor structure includes a via hole penetrating through the substrate and the III-V compound semiconductor layer from the back side of the substrate. The bottom of the via hole is defined by the first contact metal layer, and the first contact metal layer includes molybdenum, tungsten, iridium, palladium, platinum, cobalt, ruthenium, osmium, rhodium, rhenium, or a combination thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.