Semiconductor device
US11949398B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2022 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | Nov 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/021
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided. The semiconductor device incudes: a first sub-semiconductor structure including a dielectric layer; and a second sub-semiconductor structure, at least including a carrier substrate, and being bonded to the first sub-semiconductor structure. The first sub-semiconductor structure or the second sub-semiconductor structure includes a charge accumulation preventing layer, and the charge accumulation preventing layer is disposed between the carrier substrate and the dielectric layer, and is configured to avoid an undesired conductive channel from being generated due to charge accumulation on a surface of the carrier substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.