Semiconductor mixed material and application thereof
US11950491B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Nov 17, 2020 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | Jan 28, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K30/50
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A semiconductor mixed material comprises an electron donor, a first electron acceptor and a second electron acceptor. The first electron donor is a conjugated polymer. The energy gap of the first electron acceptor is less than 1.4 eV. At least one of the molecular stackability, π-π*stackability, and crystallinity of the second electron acceptor is smaller than the first electron acceptor. The electron donor system is configured to be a matrix to blend the first electron acceptor and the second electron acceptor. The present invention also provides an organic electronic device including the semiconductor mixed material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.