Quantum dot and manufacturing method for the same
US11952522B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Sep 16, 2020 |
| Grant date | Apr 9, 2024 |
| Priority date | — |
| Expiry date | Jul 14, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/60
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An object is to provide a quantum dot that has a narrow fluorescence half-width and a high fluorescence quantum yield, and emits blue fluorescence. A quantum dot (5) according to the present invention includes at least Zn and Se and does not include Cd, and has a particle diameter of 5 nm or more and 20 nm or less. In addition, the quantum dot (5) according to the present invention includes at least Zn and Se and does not include Cd, and has a fluorescence quantum yield of 5% or more and a fluorescence half-width of 25 nm or less. In the present invention, the fluorescence lifetime can be made 50 ns or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.