Method and system for predicting insulated gate bipolar transistor lifetime based on compound failure mode coupling
US11953538B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2021 |
| Grant date | Apr 9, 2024 |
| Priority date | — |
| Expiry date | Oct 8, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/04
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and system for predicting an insulated gate bipolar transistor (IGBT) lifetime based on compound failure mode coupling are provided. First, a simultaneous failure probability model of a bonding wire and a solder layer is calculated. Next, expectancy of the simultaneous failure probability model is calculated and recorded as a lifetime under a coupling effect. A coupling function relation is established. A lifetime of the solder layer and a lifetime of the bonding wire are predicted. An IGBT lifetime prediction model not taking the coupling effect into account is established. An IGBT lifetime prediction model taking the coupling effect into account is established. In the disclosure, the lifetime of the IGBT module under the coupling effect of the solder layer and the bonding wire may be accurately predicted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.