Memory device and method for shifting memory values

US11955197B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Andre Guntoro · Weil der Stadt, DE
• Chirag Sudarshan · Kaiserslautern, DE
• Christian Weis · Scheidegg, DE
• Leonardo Luiz Ecco · Stuttgart, DE
• Taha Soliman · Renningen, DE
• Norbert Wehn · Queidersbach, DE

Key dates

• Filing date: May 17, 2022
• Grant date: Apr 9, 2024
• Expiry date: Oct 28, 2042

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C7/1006
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A memory device comprising a cell field having memory cells, N bit lines, which are respectively connected to at least one of the memory cells of the cell field, N being a whole number greater than one, N sense amplifiers; a bit shift circuit, which has S switch element rows, S being a whole number greater than one and a row number in the range from zero to S−1 being assignable to each switch element row. Each switch element row includes at least one semiconductor switch element connected to one of the bit lines and one of the sense amplifiers. Switch elements of each row connect all bit lines, whose bit line number is smaller than or equal to N minus the row number, to sense amplifiers, so that the respective sense amplifier number is equal to the respective bit line number plus the row number.