Gallium oxide semiconductor structure and preparation method therefor

US11955373B2 · kind B2 · utility

Assignee

• SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Xin Ou · Hunan, CN
• Tiangui You · Chemnitz, DE
• Wenhui Xu · Nanhu, CN
• Pengcheng Zheng · Shanghai, CN
• Kai-Hung Huang · Taipei, TW
• Xi Wang · Beijing, CN

Key dates

• Filing date: Sep 29, 2019
• Grant date: Apr 9, 2024
• Expiry date: Mar 27, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/80
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention provides a method for preparing a gallium oxide semiconductor structure and a gallium oxide semiconductor structure obtained thereby. The method comprises: providing a gallium oxide single-crystal wafer (1) having an implantation surface (1a) (S1); performing an ion implantation from the implantation surface (1a) into the gallium oxide single-crystal wafer (1), such that implanted ions reach a preset depth and an implantation defect layer (11) is formed at the preset depth (S2); bonding the implantation surface (1a) to a high thermal conductivity substrate (2) to obtain a first composite structure (S3); performing an annealing treatment on the first composite structure such that the gallium oxide single-crystal wafer (1) in the first composite structure is peeled off along the implantation defect layer (11), thereby obtaining a second composite structure and a third composite structure (S4); and performing a surface treatment on the second composite structure to remove a first damaged layer (111), so as to obtain a gallium oxide semiconductor structure comprising a first gallium oxide layer (12) and the high thermal conductivity substrate (2) (S5). In the gall…