Patent · US Active

Power semiconductor component and method for producing a power semiconductor component

US11955402B2 · kind B2 · utility

0Cited by

5References

7Claims

0Family size

Assignee

VITESCO TECHNOLOGIES GMBH · DE

Inventors

Christina Quest-Matt · Munich, DE
Detlev Bagung · Bernhardswald, DE
Daniela Wolf · Munich, DE

Key dates

Filing date	Oct 6, 2020
Grant date	Apr 9, 2024
Priority date	—
Expiry date	Oct 6, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH05K2201/2036
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A power semiconductor component is specified, having a power semiconductor device arranged within a housing, wherein a heat sink is exposed on a first surface of the housing; a wiring substrate which receives the housing with the power semiconductor device and which has a first main surface and a second main surface. A heat dissipation region with increased thermal conductivity is arranged on the second main surface. The housing is arranged on the wiring substrate in such a way that the heat sink is connected to the heat dissipation region via a solder layer. A number of spacers which are arranged between the heat sink and the heat dissipation region are embedded in the solder layer. Furthermore, a method for producing a power semiconductor component is specified.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.