Semiconductor device and semiconductor circuit
US11955477B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 9, 2022 |
| Grant date | Apr 9, 2024 |
| Priority date | — |
| Expiry date | Oct 4, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to the embodiment includes: a transistor region including a first trench, a first gate electrode provided in the first trench, a second trench, a second gate electrode provided in the second trench, a third trench, and a third gate electrode provided in the third trench; a diode region including a fifth trench and a conductive layer provided in the fifth trench; a boundary region including a fourth trench and a fourth gate electrode provided in the fourth trench, the boundary region being provided between the transistor region and the diode region; a first electrode pad electrically connected to the first gate electrode; a second electrode pad electrically connected to the second gate electrode; and a third electrode pad electrically connected to the third gate electrode and the fourth gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.