Light-emitting device and manufacturing method thereof and manufacturing method of light-emitting apparatus
US11955507B2 · kind B2 · utility
0Cited by
5References
2Claims
0Family size
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Key dates
| Filing date | Sep 9, 2021 |
| Grant date | Apr 9, 2024 |
| Priority date | — |
| Expiry date | Sep 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A light-emitting device, including a first type semiconductor layer, a patterned insulating layer, a light-emitting layer, and a second type semiconductor layer, is provided. The patterned insulating layer covers the first type semiconductor layer and has a plurality of insulating openings. The insulating openings are separated from each other. The light-emitting layer is located in the plurality of insulating openings and covers a portion of the first type semiconductor layer. The second type semiconductor layer is located on the light-emitting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.