Trench capacitor structure with hybrid filling layer
US11955568B2 · kind B2 · utility
1Cited by
1References
10Claims
0Family size
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Key dates
| Filing date | Jun 2, 2022 |
| Grant date | Apr 9, 2024 |
| Priority date | — |
| Expiry date | Jun 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A capacitor structure that includes a silicon substrate having a trench structure formed therein; a dielectric disposed over a surface of the trench structure, conformal to the surface of the trench structure; and a filling layer disposed over the dielectric layer and into the trench structure, the filling layer including a conductive layer and a polymer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.