Formation method of filter device
US11955950B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2020 |
| Grant date | Apr 9, 2024 |
| Priority date | — |
| Expiry date | Feb 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/025
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A formation method of a filter device includes: forming a first layer by providing a first substrate and forming a resonance device preprocessing layer with a first side and a second side opposite to the first side, wherein the first substrate is located on the first side; forming a second layer by providing a second substrate and forming a first passive device with a third side and a fourth side opposite to the third side, wherein the second substrate is located on the third side; connecting the first layer located on the fourth side and the second layer located on the second side; removing the first substrate; and forming at least one first resonance device based on the resonance device preprocessing layer. The resonance device and the passive device are integrated in one die to form a filter device, which requires less space in an RF front-end chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.