Memory device and method for manufacturing the same
US11956942B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2021 |
| Grant date | Apr 9, 2024 |
| Priority date | — |
| Expiry date | Feb 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a device includes: a circuit on a first surface of a substrate and including a first contact; an aluminum oxide layer above the substrate in a first direction perpendicular to the first surface; a cell including a capacitor provided in the aluminum oxide layer; a first conductive layer provided between the substrate and the aluminum oxide layer in the first direction and connected to the cell; a first insulating layer between the first conductive layer and the substrate in the first direction; a second insulating layer adjacent to the aluminum oxide layer in a second direction parallel to the first surface and provided above the substrate in the first direction; and a second contact in the second insulating layer and above the first contact in the first direction to connect the cell to the first contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.