Integrated circuit device and method of manufacturing the same
US11956967B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2021 |
| Grant date | Apr 9, 2024 |
| Priority date | — |
| Expiry date | Apr 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
Abstract
An integrated circuit device includes a peripheral circuit structure arranged on a substrate, a gate stack arranged on the peripheral circuit structure and including a plurality of gate electrodes, and a dam structure formed in a dam opening portion that passes through the gate stack. The dam structure includes an insulation spacer on an inner wall of the dam opening portion and a pair of sloped sidewalls at an upper side of the dam opening portion, and a buried layer filling an inside of the dam opening portion and including an air space. The integrated circuit device further includes a mold gate stack surrounded by the dam structure and including a plurality of mold layers, a plurality of conductive lines arranged on the gate stack, and a plurality of through electrodes connected to the plurality of conductive lines, passing through the mold gate stack, and surrounded by the dam structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.