Ligand, ligand quantum dot, quantum dot layer and method for patterning the same
US11958999B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2020 |
| Grant date | Apr 16, 2024 |
| Priority date | — |
| Expiry date | Apr 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/13
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present disclosure relates to a ligand for a quantum dot, a ligand quantum dot, a quantum dot layer and a method for patterning the same. The surface of the ligand quantum dot of the present disclosure is connected with the cleavage-type ligand including a first ligand unit A, a cleavage unit B, and an adhesion adjusting unit C. The method includes: providing a substrate; coating a mixture containing the ligand quantum dot on the substrate to form a quantum dot film; exposing a preset region of the quantum dot film to ultraviolet light, so that the cleavage unit B in the cleavage-type ligand undergoes a photolysis reaction, and a molecular segment containing the adhesion adjusting unit C and obtained after decomposition is detached from a surface of the quantum dot; and washing off an unexposed region of the quantum dot film with an organic solvent, followed by drying.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.