Semiconductor device including through-electrodes
US11961788B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2022 |
| Grant date | Apr 16, 2024 |
| Priority date | — |
| Expiry date | Jul 15, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a semiconductor substrate having opposing first side and second sides; an active region and an isolation region on the first side; a circuit device on the active region; a front side interconnection structure on the first side and including front side interconnection layers disposed on different levels; first and second back side interconnection structures below the second side; a buried structure having a portion disposed in the isolation region and including a conductive line; a first through-electrode structure including a first through-electrode contacting the conductive line and penetrating the semiconductor substrate between the conductive line and the first back side interconnection structure; and a second through-electrode structure including a second through-electrode penetrating the semiconductor substrate between a first front side interconnection layer and the second back side interconnection structure. The first front side interconnection layer is on a level higher than that of the conductive line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.