Semiconductor device
US11961806B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2021 |
| Grant date | Apr 16, 2024 |
| Priority date | — |
| Expiry date | Oct 14, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include a substrate including a first region and a second region and a first active pattern on the first region. The first active pattern may include a pair of first source/drain patterns and a first channel pattern therebetween, and the first channel pattern may include a plurality of first semiconductor patterns stacked on the substrate. The semiconductor device may further include a first gate electrode, which is provided on the first channel patterns, and a supporting pattern, which is provided on side surfaces of the plurality of first semiconductor patterns to connect the side surfaces of the plurality of first semiconductor patterns to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.