Semiconductor apparatuses and methods involving diamond and GaN-based FET structures

US11961837B2 · kind B2 · utility

Assignees

• The Board of Trustees of the Leland Stanford Junior University · US
• The Regents of the University of California · US

Inventors

• Srabanti Chowdhury · Goleta, US
• Mohamadali Malakoutian · Davis, US
• Matthew A. Laurent · Rancho Palos Verdes, US
• Chenhao Ren · Davis, US
• Siwei Li · Houston, US

Key dates

• Filing date: Jan 7, 2022
• Grant date: Apr 16, 2024
• Expiry date: Jan 7, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In certain examples, methods and semiconductor structures are directed to an integrated circuit (IC) having a diamond layer section and a GaN-based substrate being monolithically integrated or bonded as part of the same IC. In a specific example, the GaN-based substrate includes GaN, AlxGayN (0<x<1; x+y=1) and a dielectric layer, and a diamond layer section which may include polycrystalline diamond. The IC includes: a GaN-based field effect transistor (FET) integrated with a portion of the GaN-based substrate, and a diamond-based FET integrated with a portion of the diamond layer section, the diamond FET being electrically coupled to the GaN-based FET and situated over or against a surface region of the GaN-based substrate.