Systems, methods, and devices for reducing optical and electrical crosstalk in photodiodes

US11961870B2 · kind B2 · utility

Assignee

• LG INNOTEK CO., LTD. · KR

Inventors

• Brian Piccione · Yardley, US
• Mark Allen Itzler · Princeton, US
• Xudong Jiang · Beijing, CN
• Krystyna Slomkowski · Sayreville Junction, US
• Harold Y. Hwang · Cambridge, US
• John L. Hostetler · Hightstown, US

Key dates

• Filing date: Feb 11, 2022
• Grant date: Apr 16, 2024
• Expiry date: Jul 3, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/807

Abstract

Devices, systems, and methods are provided for reducing electrical and optical crosstalk in photodiodes. A photodiode may include a first layer with passive material, the passive material having no electric field. The photodiode may include a second layer with an absorbing material, the second layer above the first layer. The photodiode may include a diffused region with a buried p-n junction. The photodiode may include an active region with the buried p-n junction and having an electric field greater than zero. The photodiode may include a plateau structure based on etching through the second layer to the first layer, the etching performed at a distance of fifteen microns or less from the buried p-n junction.