Engineered nanostructured passivated contacts and method of making the same
US11961925B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2021 |
| Grant date | Apr 16, 2024 |
| Priority date | — |
| Expiry date | Apr 1, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
The present disclosure relates to a passivating contact that includes a dielectric layer constructed of a first material, an intervening layer constructed of a second material, and a substrate constructed of a semiconductor, where the dielectric layer is positioned between the substrate and the intervening layer, the dielectric layer has a first thickness, and the substrate has a second thickness. The passivating contact also includes a plurality of conductive pathways that include the second material and pass through the first thickness, the second material penetrates into the second thickness forming a plurality of penetrating regions within the substrate, and the plurality of conductive pathways are configured to allow current to pass through the first thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.