Patent · US Active

Light emitting diode device

US11961951B2 · kind B2 · utility

0Cited by
2References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 22, 2021
Grant dateApr 16, 2024
Priority date
Expiry dateFeb 16, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/856
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A light emitting diode device includes a substrate, a conductive via, first and second conductive pads, a driving chip, a flat layer, a redistribution layer, a light emitting diode, and an encapsulating layer. The substrate has a first surface and a second surface opposite thereto. The conductive via penetrates from the first surface to the second surface. The first and second conductive pads are respectively disposed on the first and second surface and in contact with the conductive via. The driving chip is disposed on the first surface. The flat layer is disposed over the first surface and covers the driving chip and the first conductive pad. The redistribution layer is disposed on the flat layer and electrically connects to the driving chip. The light emitting diode is flip-chip bonded to the redistribution layer. The encapsulating layer covers the redistribution layer and the light emitting diode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.