Nonvolatile memory device and method for fabricating the same
US11963357B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2022 |
| Grant date | Apr 16, 2024 |
| Priority date | — |
| Expiry date | Dec 14, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a nonvolatile memory device. The nonvolatile memory device includes a conductive plate, a barrier conductive film extending along a surface of the conductive plate, a mold structure including a plurality of gate electrodes sequentially stacked on the barrier conductive film, a channel hole penetrating the mold structure to expose the barrier conductive film, an impurity pattern being in contact with the barrier conductive film, and formed in the channel hole, and a semiconductor pattern formed in the channel hole, extending from the impurity pattern along a side surface of the channel hole, and intersecting the plurality of gate electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.