Near-infrared light-emitting diode and device including near-infrared light-emitting diode
US11963437B2 · kind B2 · utility
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4References
16Claims
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Key dates
| Filing date | Dec 17, 2019 |
| Grant date | Apr 16, 2024 |
| Priority date | — |
| Expiry date | Nov 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2101/10
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Provided are a near-infrared light-emitting diode including an osmium (Os)-containing organometallic compound and a device including the near-infrared light-emitting diode. The near-infrared light-emitting diode includes: a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode, where the organic layer includes a near-infrared light-emitting layer, the near-infrared light-emitting layer includes the osmium (Os)-containing organometallic compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.