Method for preparing thermoelectric thick film

US11963447B2 · kind B2 · utility

Assignee

• SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Xun Shi · Nanhu, CN
• Pengfei Qiu · Shanghai, CN
• Zhiqiang Gao · Westlake, US
• Lidong Chen · Shanghai, CN
• Shiqi Yang · Shanghai, CN
• Qingyu Yang · West Lafayette, US

Key dates

• Filing date: May 6, 2020
• Grant date: Apr 16, 2024
• Expiry date: May 6, 2040

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C01P2006/60
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

The present invention relates to a method for preparing a thermoelectric thick film. The method includes: determining a brittle-to-ductile transition temperature of a thermoelectric material; rolling the blocky thermoelectric material within a temperature range above the brittle-to-ductile transition temperature and below a melting point; parameters of the rolling being as follows: a linear speed of rollers is 0.01 mm/s to 10 mm/s, preferably 0.1 mm/s to 5 mm/s, and an amount of pressing each time of the rollers is controlled at 0.0005 mm to 0.1 mm, preferably 0.001 mm to 0.05 mm; repeating the rolling until a thermoelectric thick film with a specified thickness is obtained; and annealing the obtained thermoelectric thick film; a temperature of the annealing being 100° C. to 800° C., preferably 300° C. to 500° C., and a duration of the annealing being 10 to 500 hours, preferably 100 to 300 hours.