MEMS device having uniform contacts
US11964866B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2023 |
| Grant date | Apr 23, 2024 |
| Priority date | — |
| Expiry date | Apr 13, 2043 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C1/00158
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Methods of forming a microelectromechanical device are disclosed. In some embodiments, a first layer is deposited on a backplane having at least two electrodes. One or more electrical contacts over the first layer are formed. Forming the one or more electrical contacts includes: depositing a first ruthenium layer over the first layer, depositing a titanium nitride layer over the first ruthenium layer, depositing a second ruthenium layer over the titanium nitride layer, etching the second ruthenium layer with a first etchant, etching the titanium nitride layer with a second etchant different than the first etchant; and etching the first ruthenium layer with the first etchant. Additionally, a beam is formed above one or more electrical contacts, the beam being spaced from the one or more electrical contacts and a top electrode is formed above the beam. A seal layer above the beam to enclose the beam in a cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.