Group 13 element nitride wafer with reduced variation in off-cut angle
US11965268B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Nov 5, 2020 |
| Grant date | Apr 23, 2024 |
| Priority date | — |
| Expiry date | Nov 5, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/08
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a two-dimensional crystal wafer of group 13 or III element nitride which is delimited by a face of orientation N, an opposing face of orientation E depending on the group 13 or III element, E being selected preferably from Ga, In, Al or a combination of these elements, characterized in that the variation in crystalline off-cut angle in the largest dimension of said wafer is less than 5×10-3°/mm, and its curvature of geometric deformation of its faces exhibits a flexure in terms of absolute value of less than 10-3 mm/mm of the largest dimension of said wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.