Low noise and high-performance field effect transistors of 2-dimensional materials and methods to fabricate the same
US11967629B2 · kind B2 · utility
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3References
19Claims
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Key dates
| Filing date | Jun 22, 2019 |
| Grant date | Apr 23, 2024 |
| Priority date | — |
| Expiry date | Jan 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and methods of fabricating and using the same are provided. The semiconductor device comprises a channel region and at least a first, second, and third electrode. The channel region includes a compound having a transition metal and a chalcogen. The thickness of the channel region is about 3 to about 40 atomic layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.