Thin film transistor structure, display panel and display device
US11967646B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2023 |
| Grant date | Apr 23, 2024 |
| Priority date | — |
| Expiry date | Jun 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed are a thin film transistor structure, a display panel and a display device. The thin film transistor structure includes a base, a source electrode, a drain electrode configured to connect to a pixel electrode and a grid electrode. The source electrode, the drain electrode and the grid electrode are provided on the base. and a channel is formed between the source electrode and the drain electrode. The thin film transistor structure further includes an insulating layer and a slow-release electrode. The insulating layer is provided on a side of the source electrode and the drain electrode, and filled in the channel. The slow-release electrode is provided in the insulating layer. At least a part of the slow-release electrode is provided inside the channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.