Method for manufacturing a detection structure with an optimised absorption rate, and said structure
US11967665B2 · kind B2 · utility
0Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2019 |
| Grant date | Apr 23, 2024 |
| Priority date | — |
| Expiry date | Feb 3, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/24
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for forming a detection structure for detecting electromagnetic radiation includes an MOS transistor as a transducer. The method is based on the use of lateral extension elements as a doping mask for the semiconductor layer of the transistor and an etching mask for the same semiconductor layer, in order to provide contact portions of a drain and a source of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.