Direction-dependent stress and/or strain measurement cell for a stress and/or strain measurement system

US11971316B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Falk Roewer · Magdeburg, DE
• Clemens Jurgschat · Ehningen, DE
• Torsten Ohms · Lambach, DE

Key dates

• Filing date: May 26, 2022
• Grant date: Apr 30, 2024
• Expiry date: Aug 5, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A stress and/or strain measurement cell for a stress and/or strain measurement system. The cell includes a reference contact, a sensor contact and a first current mirror circuit which is integrated into a semiconductor material and has a first conduction path connectable or connected to the reference contact and a second conduction path connectable or connected to the sensor contact. The first conduction path includes a first transistor and the second conduction path includes a second transistor. A first crystal direction of the semiconductor material oriented perpendicular to a first inversion channel of the first transistor is definable for the first inversion channel and a second crystal direction of the semiconductor material oriented perpendicular to a second inversion channel of the second transistor is definable for the second inversion channel. The first crystal direction of the semiconductor material is inclined relative to the second crystal direction of the semiconductor material.