Patent · US Active

Light propagation time pixel and light propagation time sensor with corresponding pixel

US11971506B2 · kind B2 · utility

0Cited by

2References

5Claims

0Family size

Assignee

PMD TECHNOLOGIES AG · DE

Inventors

Matthias Franke · Haiger, DE
Robert Rössler · Berlin, DE

Key dates

Filing date	Aug 30, 2019
Grant date	Apr 30, 2024
Priority date	—
Expiry date	Jul 8, 2041

Classification

Technology area (CPC G)Physics
CPC primaryG01S17/89
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

The disclosure relates to a light propagation time pixel, comprising modulation gates and integration nodes which are arranged on the upper face of a photosensitive semiconductor region. The photosensitive semiconductor region is designed as an N-epitaxy and is delimited laterally and/or at the corners by p-doped vertical p-structures. A buried layer with a p-doping adjoins the lower face of the photosensitive semiconductor region, and the vertical p-structures are in electric contact with the buried layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.