Patent · US Active

Cryogenic power supply

US11972320B1 · kind B1 · utility

1Cited by
3References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateDec 4, 2020
Grant dateApr 30, 2024
Priority date
Expiry dateMar 1, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N60/805
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A quantum device includes a cryogenic chamber and a quantum computing module positioned within the cryogenic chamber. The quantum computing module includes a silicon substrate and a quantum circuit (QC) die including a qubit integrated circuit. The QC die is attached to the silicon substrate. An electronic circuit (EC) die including an electronic integrated circuit is attached to the QC die such that the qubit integrated circuit and the electronic integrated circuit face each other. The QC die can be fusion bonded to the EC die. A circuit board (CB) includes a power converter configured to convert input power received from a cryogenic chamber feedthrough to output power that is coupled to the QC die and to the EC die.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.