Through-silicon transmission lines and other structures enabled by same
US11973057B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2021 |
| Grant date | Apr 30, 2024 |
| Priority date | — |
| Expiry date | Jul 18, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06565
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One embodiment is a microelectronic assembly including an assembly support structure; a first die including a pair of hot via comprising through-substrate-via (TSVs) extending through the first die between first and second sides thereof and a plurality of ground vias surrounding the pair of hot vias and extending through the first die between the first and second sides thereof. The first die further includes a pair of signal interconnect structures electrically connected to the pair of hot vias disposed on the second side of the first die. The assembly further includes a second die between the assembly support structure and the first die the pair of signal interconnect structures disposed on the first side thereof. The first die is connected to the second die via a signal die-to-die (DTD) interconnect structure including the signal interconnect structures of the first and second dies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.