Semiconductor power module

US11973064B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Christian Marc Lautensack · Rötteln, DE
• Alexander Kaiser · Neutraubling, DE
• Jan Homoth · Reutlingen, DE

Key dates

• Filing date: Apr 8, 2020
• Grant date: Apr 30, 2024
• Expiry date: May 13, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/40137
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor power module including first and second power transistors situated in parallel between first collector and first emitter strip conductors. A first connection surface of each of the power transistors is electroconductively connected to the first collector strip conductor, and a second connection surface of each of the power transistors is electroconductively connected to the first emitter strip conductor, so that a current flowing between the first collector strip conductor and the first emitter strip conductor is divided between the power transistors when the power transistors are each conductively connected via an applied control voltage. A first external power contact is directly contacted with the first collector strip conductor at a first contact area, a second external power contact is contacted with the first emitter strip conductor at a second contact area via a first connecting element, and the second contact area is positioned asymmetrically between the power transistors.