Semiconductor device and manufacturing method thereof
US11973108B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 1, 2020 |
| Grant date | Apr 30, 2024 |
| Priority date | — |
| Expiry date | Dec 1, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A semiconductor device includes: a drift region that is arranged on a main surface of a substrate, and has a higher impurity concentration than the substrate; a first well region that is connected to the drift region; and a second well region that is arranged adjacent to the first well region and faces the drift region. The second well region has a higher impurity concentration than the first well region. A distance between the source region that faces the drift region via the first well region and the drift region is greater than a distance between the second well region and the drift region, in a direction parallel to the main surface of the substrate. A depletion layer extending from the second well region reaches the drift region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.