Semiconductor device
US11973135B2 · kind B2 · utility
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21Claims
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Key dates
| Filing date | Feb 6, 2018 |
| Grant date | Apr 30, 2024 |
| Priority date | — |
| Expiry date | Nov 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
A semiconductor device includes a main groove formed in a main surface of a substrate, a semiconductor region formed in contact with a surface of the main groove, an electron supply region formed in contact with a surface of the semiconductor region on opposite sides of at least side surfaces of the main groove to generate a two-dimensional electron gas layer in the semiconductor region, and a first electrode and a second electrode formed in contact with the two-dimensional electron gas layer and apart from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.