Light emitting device and production method and use thereof

US11973163B2 · kind B2 · utility

Assignee

• TIANJIN SANAN OPTOELECTRONICS CO., LTD. · CN

Inventors

• ChingYuan TSAI · Tianjin, CN
• Chun-Yi Wu · New Taipei, TW
• Fulong Li · Tianjin, CN
• Duxiang WANG · Xiamen, CN
• Chaoyu WU · Xiamen, CN
• Wenhao GAO · Tianjin, CN
• Xiaofeng Liu · Dallas, US
• Weihuan LI · Shanghai, CN
• Liming SHU · Tianjin, CN
• Chao Liu · Chengdu, CN

Key dates

• Filing date: Jan 20, 2023
• Grant date: Apr 30, 2024
• Expiry date: Jan 20, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/857

Abstract

A light emitting device includes an epitaxial structure and first and second electrodes on a side of the epitaxial structure. The epitaxial structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode is disposed on the epitaxial structure to be electrically connected with the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure to be electrically connected with the second-type semiconductor layer. The second electrode is in ohmic contact with a second-type window sublayer of the second-type semiconductor layer.