Patent · US Active

Semiconductor laser and projector

US11973317B2 · kind B2 · utility

0Cited by

3References

18Claims

0Family size

Assignee

Osram OLED GMBH · DE

Inventors

Jan Marfeld · Regensburg, DE
André Somers · Obertraubling, DE
Andreas Löffler · Neutraubling, DE
Sven Gerhard · Alteglofsheim, DE

Key dates

Filing date	Mar 13, 2019
Grant date	Apr 30, 2024
Priority date	—
Expiry date	Aug 8, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/176
WIPO fieldOptics
WIPO sectorInstruments

Abstract

In an embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) in which an active zone (22) for generating laser radiation (L) is located. Several electrical contact surfaces (5) serve for external electrical contacting of the semiconductor layer sequence (2). Several parallel ridge waveguides (3) are formed from the semiconductor layer sequence (2) and configured to guide the laser radiation (L) along a resonator axis, so that there is a separating trench (6) between adjacent ridge waveguides. At least one electrical feed (4) serves from at least one of the electrical contact surfaces (5) to guide the current to at least one of the ridge waveguides (3). A distance (A4) between the ridge waveguides is at most 50 μm. The ridge waveguides (3) are electrically controllable individually or in groups independently of one another and/or configured for single-mode operation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.