Systems and methods for a fast near-field electromagnetic simulation methodology for side-channel emission analysis
US11973868B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2020 |
| Grant date | Apr 30, 2024 |
| Priority date | — |
| Expiry date | Feb 9, 2042 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, machine readable media and systems for near-field electromagnetic simulation for side-channel emission analysis of an integrated circuit (IC) are described. In one embodiment, a method can include the following operations: simulating EM field strengths for a plurality of grid partitions of a circuit area of the IC based on a cryptographic work load applied to a model of the IC; identifying one or more of the grid partitions as a security sensitive region for the IC based on the EM field strengths, wherein one or more grid partitions outside of the security sensitive region are identified as non-security sensitive regions for the IC; and simulating EM fields for the IC to perform the EM side-channel emission analysis, wherein contributions of the EM fields from the non-security sensitive regions for the EM side-channel emission analysis are based on a linear superposition of wire currents in the non-security sensitive regions of the IC.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.