Preparation method of silicon-based molecular beam heteroepitaxy material, memristor, and use thereof
US11974512B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2022 |
| Grant date | Apr 30, 2024 |
| Priority date | — |
| Expiry date | Feb 20, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A preparation method of a silicon-based molecular beam heteroepitaxy material, a memristor, and use thereof are provided. A structure of the heteroepitaxy material is obtained by allowing a SrTiO3 layer, a La0.67Sr0.33MnO3 layer, and a (BaTiO3)0.5—(CeO2)0.5 layer to successively grow on a P-type Si substrate. The silicon-based epitaxy structure is obtained by allowing a first layer of SrTiO3, a second layer of La0.67Sr0.33MnO3, and a third layer of (BaTiO3)0.5—(CeO2)0.5 (in which an atomic ratio of BaTiO3 to CeO2 is 0.5:0.5) to successively grow at a specific temperature and a specific oxygen pressure. The preparation method of a silicon-based molecular beam heteroepitaxy material adopts pulsed laser deposition (PLD), which is relatively simple and easy to control, and can achieve the memristor function and neuro-imitation characteristics. A thickness of the first buffer layer of SrTiO3 can reach 40 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.